
In contrast to the battery voltage found in cars and smaller vehicles, 24 V board nets are typically used in trucks and commercial vehicles.
Nexperia developed the X2SON packages - part of its MicroPak package range - to provide the smallest footprint for logic functions while ensuring pad pitch remains 0.4mm
With a maximum RDS(on) of 0.67 mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps.
Developed to meet the requirements of Super Speed USB applications, the new devices provide effective 1, 2 & 3 line pair protection (Tx +/-, Rx +/-, D +/-) and filtering.
Nexperia’s GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon
Nexperia’s TrEOS technology optimizes the three pillars of ESD protection to deliver devices with the ideal combination of low capacitance, low clamping voltage and high
Measuring just 2 mm x 2 mm (14 pin), 2 mm x 2.4 mm (16 pin), 2 mm x 3.2 mm (20 pin) and 2 mm x 4 mm (24 pin), the 0.4 mm pitch DHXQFN packages are only 0.45 mm high.
These products use Nexperia’s proven TrEOS technology, which combines low clamping with low capacitance and high robustness.
This development results in the increasing need for voltage translators to connect the SoC to other standard process devices and I/O ports like legacy Class B and Class C
Next generation wearable and hearable devices are incorporating new levels of artificial intelligence (AI) and machine learning (ML), creating several challenges for prod
With RDS(on) up to 25% better than competing devices, they minimize energy losses and increase efficiency in load switching and battery management.
Additionally, this portfolio also aims to address the upcoming high-speed video-links as well as the OPEN Alliance MGbit ethernet applications.
Nexperia offers engineers access to one of the most extensive CFP packaged diodes portfolios on the market from one supplier.
Nexperia will demonstrate how its ongoing commitment to investment in R&D and capacity is supporting these megatrends with its expanding portfolio
The expansion of Nexperia’s expertise comes through the acquisition of Netherlands-based Nowi, founded in 2016.
- IC GATE OR 4CH 2-INP 14SO
- NOW NEXPERIA HEF4043BT - R-S LAT
- DIODE ZENER 27V 500MW ALF2
- DIODE ZENER 39V 250MW TO236AB
- IC GATE NOR 4CH 2-INP 14SO
- MOSFET N-CH 40V 100A LFPAK56
- IC BUF NON-INVERT 3.6V 5TSSOP
- TRANS PREBIAS PNP 50V DFN1006B-3
- IC BUF NON-INVERT 5.5V 20TSSOP
- IC FF JK TYPE DUAL 1BIT 16SO
- 60 V, 1 A LOW LEAKAGE CURRENT TR
- TRANS PNP 80V 1A SOT89
- TVS DIODE 100VWM SOD323
- IC BUFFER NON-INVERT 6V 8TSSOP
- DIODE ZENER 6.2V 400MW ALF2
- MOSFET N-CH 55V 55A DPAK
- IC TRANSPARENT LATCH 20SOIC
- IC BUF NON-INVERT 5.5V 8VSSOP
- DIODE SCHOTTKY 60V 1A CFP3
- TRANS PREBIAS PNP 0.425W
- TRANS PREBIAS 2NPN 50V SOT666
- IC SWITCH DUAL SPST 8TSSOP
- NOW NEXPERIA 74AUP1G98GN - LOWPO
- IC MUX/DEMUX DUAL 4CH 16SOIC
- TVS DIODE 3.3VWM 8.5VC DFN1308-6
- 20 V, DUAL P-CHANNEL TRENCH MOSF
- TVS DIODE 5VWM DFN1006-2
- DIODE SCHOTTKY 20V 1A 3HUSON
- MOSFET N-CH 60V 360MA TO236AB



















































