
Next generation wearable and hearable devices are incorporating new levels of artificial intelligence (AI) and machine learning (ML), creating several challenges for prod
With RDS(on) up to 25% better than competing devices, they minimize energy losses and increase efficiency in load switching and battery management.
Additionally, this portfolio also aims to address the upcoming high-speed video-links as well as the OPEN Alliance MGbit ethernet applications.
Nexperia offers engineers access to one of the most extensive CFP packaged diodes portfolios on the market from one supplier.
Nexperia will demonstrate how its ongoing commitment to investment in R&D and capacity is supporting these megatrends with its expanding portfolio
The expansion of Nexperia’s expertise comes through the acquisition of Netherlands-based Nowi, founded in 2016.
Since the launch of ASFETs, success has been seen with products optimized for battery isolation, DC motor control, Power-over-Ethernet, automotive airbag applications and
Standard products include the PNU65010ER (CFP3) and PNU65010EP (CFP5) while AEC-Q101 qualified products include the PNU65010ER-Q (CFP3) and PNU65010EP-Q (CFP5).
Nexperia developed the TrEOS portfolio specifically to offer our customers a range of high-performance ESD protection solutions for applications such as USB3.2, USB4™, Th
In contrast to the battery voltage found in cars and smaller vehicles, 24 V board nets are typically used in trucks and commercial vehicles.
Nexperia developed the X2SON packages - part of its MicroPak package range - to provide the smallest footprint for logic functions while ensuring pad pitch remains 0.4mm
With a maximum RDS(on) of 0.67 mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps.
Developed to meet the requirements of Super Speed USB applications, the new devices provide effective 1, 2 & 3 line pair protection (Tx +/-, Rx +/-, D +/-) and filtering.
Nexperia’s GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon
Nexperia’s TrEOS technology optimizes the three pillars of ESD protection to deliver devices with the ideal combination of low capacitance, low clamping voltage and high
- IC COMPARATOR MAGNITUDE 16SSOP
- DIODE ZENER 4.3V 1.3W DO41
- NOW NEXPERIA PBSS5350D - SMALL S
- 74LV1T08 - 2-INPUT SINGLE SUPPLY
- DIODE ZENER 12V 320MW SOD323
- DIODE ZENER 24V 320MW SOD323
- BSH205G2 - 20 V, P-CHANNEL TRENC
- MOSFET N-CH 30V 1.78A DFN1006-3
- IC FF D-TYPE DUAL 9BIT 56SSOP
- DIODE ZENER 15V 375MW SOD123F
- DIODE ZENER 24V 275MW SOT323
- MOSFET N-CH 60V 76A LFPAK56
- TVS DIODE 4VWM 3.7VC DSN0603-2
- TRANS PNP 45V 1A SOT89
- IC BUFFER NON-INVERT 5.5V 6XSON
- DIODE ZENER 18V 250MW DFN1006-2
- IC GATE NAND 4CH 2-INP 14SSOP
- ZENER DIODE, 3V V(Z), 3.72%, 0.4
- IC MUX/DEMUX 1X16 24DHVQFN
- IC BUF NON-INVERT 3.6V 48TSSOP
- TRANS PNP 60V 1A 3HUSON
- TVS DIODE 5VWM 33VC SOD323
- IC SHIFT REGISTER 8BIT 16SOIC
- IC BUFFER NON-INVERT 6V 16SO
- DIODE ZENER 9.1V 375MW SOD123F
- DIODE ZENER 10V 365MW SOD123
- BCX56-10T/SOT89/MPT3
- DIODE ZENER 3V 250MW DFN1006-2
- IC GATE OR 1CH 2-INP SC74A



















































