
Next generation wearable and hearable devices are incorporating new levels of artificial intelligence (AI) and machine learning (ML), creating several challenges for prod
With RDS(on) up to 25% better than competing devices, they minimize energy losses and increase efficiency in load switching and battery management.
Additionally, this portfolio also aims to address the upcoming high-speed video-links as well as the OPEN Alliance MGbit ethernet applications.
Nexperia offers engineers access to one of the most extensive CFP packaged diodes portfolios on the market from one supplier.
Nexperia will demonstrate how its ongoing commitment to investment in R&D and capacity is supporting these megatrends with its expanding portfolio
The expansion of Nexperia’s expertise comes through the acquisition of Netherlands-based Nowi, founded in 2016.
Since the launch of ASFETs, success has been seen with products optimized for battery isolation, DC motor control, Power-over-Ethernet, automotive airbag applications and
Standard products include the PNU65010ER (CFP3) and PNU65010EP (CFP5) while AEC-Q101 qualified products include the PNU65010ER-Q (CFP3) and PNU65010EP-Q (CFP5).
Nexperia developed the TrEOS portfolio specifically to offer our customers a range of high-performance ESD protection solutions for applications such as USB3.2, USB4™, Th
In contrast to the battery voltage found in cars and smaller vehicles, 24 V board nets are typically used in trucks and commercial vehicles.
Nexperia developed the X2SON packages - part of its MicroPak package range - to provide the smallest footprint for logic functions while ensuring pad pitch remains 0.4mm
With a maximum RDS(on) of 0.67 mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps.
Developed to meet the requirements of Super Speed USB applications, the new devices provide effective 1, 2 & 3 line pair protection (Tx +/-, Rx +/-, D +/-) and filtering.
Nexperia’s GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon
Nexperia’s TrEOS technology optimizes the three pillars of ESD protection to deliver devices with the ideal combination of low capacitance, low clamping voltage and high
- IC OCTAL D TRANSP LATCH 20DHVQFN
- IC BUFFER NON-INVERT 3.6V 6XSON
- DIODE ZENER 5.73V 400MW SOD323
- IC BUFFER INVERT 5.5V 20SO
- IC MULTIPLEXER 1 X 8:1 16SO
- IC BUFFER NON-INVERT 3.6V 6XSON
- IC GATE MULTIFUNCTION DL XSON10U
- TRANS 2PNP 120V 1A 6HUSON
- IC DECODER/DEMUX 1X2:4 16TSSOP
- MOSFET N-CH 65V 75A D2PAK-7
- IC BUFFER NON-INVERT 6V 20TSSOP
- IC TXRX NON-INVERT 3.6V 20SSOP
- IC BUF NON-INVERT 5.5V 5TSSOP
- DIODE ZENER 62V 400MW ALF2
- DIODE ARRAY SCHOTTKY 30V SOT23
- IC GATE NOR 1CH 2-INP 5TSSOP
- TRANS PREBIAS NPN 50V SOT323
- DIODE ZENER 43V 300MW SOD323
- IC MULTIPLEXER 4 X 2:1 16SO
- DIODE ZENER 2.4V 250MW TO236AB
- IC INVERT SCHMITT 3CH 3-IN 8XSON
- 74HCT165DB - PARALLEL IN SERIAL
- DIODE ARRAY SCHOTTKY 30V SOT23
- IC GATE NAND 4CH 2-INP 14DHVQFN
- MOSFET P-CH 20V 5A DFN2020MD-6
- IC INVERTER 6CH 6-INP 14SO
- IC GATE NAND 1CH 2-INP 5TSSOP
- IC GATE XOR 1CH 2-INP 5TSSOP
- DIODE SCHOTTKY 40V 1A SOD128



















































