
Nexperia offers engineers access to one of the most extensive CFP packaged diodes portfolios on the market from one supplier.
Nexperia will demonstrate how its ongoing commitment to investment in R&D and capacity is supporting these megatrends with its expanding portfolio
The expansion of Nexperia’s expertise comes through the acquisition of Netherlands-based Nowi, founded in 2016.
Since the launch of ASFETs, success has been seen with products optimized for battery isolation, DC motor control, Power-over-Ethernet, automotive airbag applications and
Standard products include the PNU65010ER (CFP3) and PNU65010EP (CFP5) while AEC-Q101 qualified products include the PNU65010ER-Q (CFP3) and PNU65010EP-Q (CFP5).
Nexperia developed the TrEOS portfolio specifically to offer our customers a range of high-performance ESD protection solutions for applications such as USB3.2, USB4™, Th
In contrast to the battery voltage found in cars and smaller vehicles, 24 V board nets are typically used in trucks and commercial vehicles.
Nexperia developed the X2SON packages - part of its MicroPak package range - to provide the smallest footprint for logic functions while ensuring pad pitch remains 0.4mm
With a maximum RDS(on) of 0.67 mΩ, Nexperia’s PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380 amps.
Developed to meet the requirements of Super Speed USB applications, the new devices provide effective 1, 2 & 3 line pair protection (Tx +/-, Rx +/-, D +/-) and filtering.
Nexperia’s GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon
Nexperia’s TrEOS technology optimizes the three pillars of ESD protection to deliver devices with the ideal combination of low capacitance, low clamping voltage and high
Measuring just 2 mm x 2 mm (14 pin), 2 mm x 2.4 mm (16 pin), 2 mm x 3.2 mm (20 pin) and 2 mm x 4 mm (24 pin), the 0.4 mm pitch DHXQFN packages are only 0.45 mm high.
These products use Nexperia’s proven TrEOS technology, which combines low clamping with low capacitance and high robustness.
This development results in the increasing need for voltage translators to connect the SoC to other standard process devices and I/O ports like legacy Class B and Class C
- IC FF D-TYPE SNGL 6BIT 16SO
- DIODE ZENER 3.6V 1.3W DO41
- TRANS PREBIAS NPN 0.425W
- IC FF D-TYPE SNGL 8BIT 20SSOP
- DIODE ZENER 10V 320MW SOD323
- IC GATE AND 4CH 2-INP 14SO
- NOW NEXPERIA BAV70M - RECTIFIER
- TRANS 2PNP 65V 0.1A 6TSSOP
- MOSFET N-CH 60V 92A D2PAK
- TRANS PNP 300V 50MA TO236AB
- IC INVERTER OD 1CH 1-INP 6XSON
- TVS DIODE 3.3VWM TO236AB
- MOSFET N-CH 55V 75A I2PAK
- TRANS NPN 32V 100MA TO236AB
- IC SWITCH DUAL SPST 8TSSOP
- DIODE SCHOTTKY 40V 1A DSN1006-2
- TRANS PREBIAS 2NPN 50V 6TSOP
- IC GATE AND/OR 3-IN 6X2SON
- DIODE ZENER 22V 250MW TO236AB
- NOW NEXPERIA CBT3257ADB - MULTIP
- IC MULTIVIBRATOR 5.3NS 8VSSOP
- DIODE ZENER 36V 400MW ALF2
- VOLTAGE REGULATOR DIODES
- TRANS 2NPN 45V 0.1A 6TSSOP
- IC GATE XOR 2CH 2-INP 8TSSOP
- BC817K SERIES - 45 V, 500 MA NPN
- DIODE ZENER 33V 250MW TO236AB
- TRANS NPN 40V 2A TO236AB
- TRANSISTOR GEN PURP
